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参数资料
| 型号： | APT60GF120JRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 115 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/9页 |
| 文件大小： | 124K |
| 代理商： | APT60GF120JRD |
052-6259
Rev
B
8-2002
MIN
TYP
MAX
3
4.5
6
2.1
3.4
2.5
3.4
500
3000
±100
Characteristic / Test Conditions
Gate Threshold Voltage
(VCE = VGE, IC = 500A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 60A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 60A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
UNIT
Volts
mA
nA
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
SOT-227
G
E
C
ISOTOP
"UL Recognized"
APT60GF120JRD
1200V
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
RBSOA
PD
TJ,TSTG
TL
APT60GF120JRD
1200
±20
±30
115
60
360
360A @ 960V
521
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed
.
Low Forward Voltage Drop
20 kHz operation @ 800V, 24A
Low Tail Current
10 kHz operation @ 800V, 40A
RBSOA and SCSOA Rated
Ultra Low Leakage Current
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60GF120JRDQ3 | 功能描述:IGBT 1200V 149A 625W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GF60JU2 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GF60JU3 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GL120JU2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP? Boost chopper Trench + Field Stop IGBT4 Power module |
| APT60GL120JU2_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP?? Boost chopper Trench Field Stop IGBT4 Power module |
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