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参数资料
| 型号： | APT55M65L2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 78 A, 550 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 163K |
| 代理商： | APT55M65L2FLL |
050-7225
Rev
A
7-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT55M65L2FLL
550V 78A 0.065
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular TO-264 MAX Package
FAST RECOVERY BODY DIODE
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 39A)
Zero Gate Voltage Drain Current (V
DS = 550V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 440V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
550
0.065
250
1000
±100
35
APT55M65L2FLL
550
78
312
±30
±40
893
7.14
-55 to 150
300
78
50
3200
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
TO-264
Max
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT55M85B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M85JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT55M85LFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M90BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 550V V(BR)DSS | 63A I(D) |
| APT55M90DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
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