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参数资料
| 型号： | APT55M65L2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 78 A, 550 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 163K |
| 代理商： | APT55M65L2FLL |
050-7225
Rev
A
7-2004
Typical Performance Curves
APT55M65L2FLL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT60DF60
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
TO-264 MAXTM(L2) Package Outline
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT55M85B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M85JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT55M85LFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M90BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 550V V(BR)DSS | 63A I(D) |
| APT55M90DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
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