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参数资料
| 型号： | APT55M65L2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 78 A, 550 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 163K |
| 代理商： | APT55M65L2FLL |
050-7225
Rev
A
7-2004
DYNAMIC CHARACTERISTICS
APT55M65L2FLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -78A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -78A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -78A, di/dt = 100A/s)
Peak Recovery Current
(IS = -78A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
78
312
1.3
15
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.6
Tj = 125°C
10
Tj = 25°C
17
Tj = 125°C
34
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 275V
I
D = 78A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 275V
I
D = 78A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 367V, VGS = 15V
I
D = 78A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 367V, VGS = 15V
I
D = 78A, RG = 5
MIN
TYP
MAX
9165
1700
80
205
55
105
23
20
55
8
1425
1855
1975
2045
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.05mH, RG = 25, Peak IL = 78A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ ID-78A
di/dt ≤ 700A/s V
R ≤ 550V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
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相关代理商/技术参数 |
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| APT55M85B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
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| APT55M85LFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M90BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 550V V(BR)DSS | 63A I(D) |
| APT55M90DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
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