- 您现在的位置：买卖IC网 > PDF目录57948 > APT6032HLL 16 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA PDF资料下载
参数资料
| 型号： | APT6032HLL |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封装： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 88K |
| 代理商： | APT6032HLL |
DYNAMIC CHARACTERISTICS
APT6032HLL
050-7321
Rev
A
3-2003
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
16A
)
Reverse Recovery Time (I
S
= -I
D
16A
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D
16A
, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
16
64
1.3
580
7.92
8
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.62
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 16A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 300V
I
D
= 16A @ 25°C
R
G
= 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 400V, V
GS
= 15V
I
D
= 16A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 400V V
GS
= 15V
I
D
= 16A, R
G
= 5
MIN
TYP
MAX
2615
3200
420
630
47
70
65
100
13
16
36
60
918
510
23
35
410
227
88
360
108
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.45mH, RG = 25, Peak IL = 16A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
16A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
相关PDF资料 |
PDF描述 |
|---|---|
| APT6045CVR | 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT60GF60JU3 | 93 A, 600 V, N-CHANNEL IGBT |
| APT60GF60JU3 | 93 A, 600 V, N-CHANNEL IGBT |
| APT60M80L2VR | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M80L2VRG | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6033BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6033BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6035AVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
发布紧急采购，3分钟左右您将得到回复。