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参数资料
| 型号： | APT60DQ60S |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快软恢复整流二极管 |
| 文件页数： | 2/4页 |
| 文件大小： | 139K |
| 代理商： | APT60DQ60S |
APT60DQ60B_S(G)
DYNAMIC CHARACTERISTICS
0
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
MIN
TYP
MAX
-
26
-
35
-
45
-
4
-
-
175
-
680
-
8
-
-
100
-
1380
-
26
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 400V, T
C
= 25
°
C
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 400V, T
C
= 125
°
C
I
F
= 60A, di
F
/dt = -1000A/
μ
s
V
R
= 400V, T
C
= 125
°
C
I
F
= 1A, di
F
/dt = -100A/
μ
s, V
R
= 30V, T
J
= 25
°
C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θ
JC
W
T
Torque
MIN
TYP
MAX
.44
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lbin
Nm
D = 0.9
0.167
0.273
0.00823
0.0931
Power
(watts)
RC MODEL
Junction
temp. (
°
C)
Case temperature. (
°
C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60DQ60SG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT60DS04HJ | 制造商:Microsemi Corporation 功能描述:MOD DIODE 400V SOT-227 |
| APT60DS10HJ | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60DS20HJ | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60GA60JD60 | 功能描述:IGBT 600V 112A 356W SOT-227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 8™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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