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参数资料
| 型号： | APT60DQ60S |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快软恢复整流二极管 |
| 文件页数： | 4/4页 |
| 文件大小： | 139K |
| 代理商： | APT60DQ60S |
APT60DQ60B_S(G)
0
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = di
M
/dt
6
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
APT60GT60BR
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO
-
247 Package Outline
D
3
PAK Package Outline
15.85 (.624)
18.70 (.736)
1.15 (.045)
5.45 (.215) BSC
4.90 (.193)
1.45 (.057)
2.70 (.106)
0.40 (.016)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Cathode)
2.40 (.094)
C
(
1.90 (.075)
Cathode
Anode
1.20 (.047)
12.40 (.488)
13.30 (.524)
1.00 (.039)
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
10.90 (.430) BSC
3.50 (.138)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Dimensions in Millimeters and (Inches)
C
Anode
Cathode
e3
e1 SAC: Tin, Silver, Copper
100% Sn
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60DQ60SG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT60DS04HJ | 制造商:Microsemi Corporation 功能描述:MOD DIODE 400V SOT-227 |
| APT60DS10HJ | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60DS20HJ | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60GA60JD60 | 功能描述:IGBT 600V 112A 356W SOT-227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 8™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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