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参数资料
| 型号： | APT65GP60JDF2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 130 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 7/9页 |
| 文件大小： | 209K |
| 代理商： | APT65GP60JDF2 |
050-7441
Rev
C
9-2004
APT65GP60JDF2
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 75°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 65A
Forward Voltage
I
F = 130A
I
F = 65A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.82
3.60
2.22
APT65GP60JDF2
26
32
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-60
-65
-3
-
115
-
410
-7
-
-49
-
705
-22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
0.320
°C/W
0.515
°C/W
0.375
°C/W
0.00278 J/
°C
0.0421 J/
°C
0.242 J/
°C
Power
(watts)
Junction
temp(
°C)
RC MODEL
Case temperature(
°C)
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