- 您现在的位置：买卖IC网 > PDF目录48371 > APT8030B2VFRG (MICROSEMI POWER PRODUCTS GROUP) 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF资料下载
参数资料
| 型号： | APT8030B2VFRG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | CLIP MOUNTED TO-247, TMAX-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 62K |
| 代理商： | APT8030B2VFRG |
DYNAMIC CHARACTERISTICS
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
APT8030B2VFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
MIN
TYP
MAX
6600
7900
645
900
320
480
340
510
31
47
170
250
16
32
14
28
59
90
816
UNIT
pF
nC
ns
MIN
TYP
MAX
27
108
1.3
18
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.0
Tj = 125°C
6.7
Tj = 25°C
13
Tj = 125°C
22
1 Repetitive Rating: Pulse width limited by maximum junction
4 Starting Tj = +25°C, L = 6.86mH, RG = 25, Peak IL = 27A
temperature.
5 These dimensions are equal to the TO-247 without mounting hole
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
6 IS - -ID [Cont.], di/dt = 100A/s, VDD - VDSS, Tj - 150°C, RG = 2.0,
3 See MIL-STD-750 Method 3471
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
050-5623
Rev
A
1-2005
相关PDF资料 |
PDF描述 |
|---|---|
| APT8030B2VFR | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8030CFN | 29 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5085CN | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT6017AFN | 39 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R3AN | 8.5 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT8030B2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8030B2VRG | 功能描述:MOSFET N-CH 800V 27A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT8030CFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 29A I(D) |
| APT8030DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP |
| APT8030FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 29A I(D) | F-PACK SIP |
发布紧急采购，3分钟左右您将得到回复。