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参数资料
| 型号： | APT80GA60B2D40 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 143 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, TMAX-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 159K |
| 代理商： | APT80GA60B2D40 |
052-6342
Rev
A
4
-
2008
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
V
ces
Collector Emitter Voltage
600
V
I
C1
Continuous Collector Current @ T
C = 25°C
143
A
I
C2
Continuous Collector Current @ T
C = 100°C
80
I
CM
Pulsed Collector Current 1
240
V
GE
Gate-Emitter Voltage 2
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
625
W
SSOA
Switching Safe Operating Area @ T
J = 150°C
240A @ 600V
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Combi (IGBT and Diode)
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
High power PFC boost
Welding
UPS, solar, and other inverters
High frequency, high efciency industrial
FEATURES
Fast switching with low EMI
Very Low E
off
for maximum efciency
Ultra low C
res
for improved noise immunity
Low conduction loss
Low gate charge
Increased intrinsic gate resistance for low EMI
RoHS compliant
APT80GA60B2D40
APT80GA60LD40
600V
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E
off is achieved
through leading technology silicon design and lifetime control processes. A reduced E
off -
V
CE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C
res/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE = 0V, IC = 1.0mA
600
V
CE(on)
Collector-Emitter On Voltage
V
GE = 15V,
I
C = 47A
T
J = 25°C
2.0
2.5
T
J = 125°C
1.9
V
GE(th)
Gate Emitter Threshold Voltage
V
GE =VCE , IC = 1mA
3
4.5
6
I
CES
Zero Gate Voltage Collector Current
V
CE = 600V,
V
GE = 0V
T
J = 25°C
275
μA
T
J = 125°C
3000
I
GES
Gate-Emitter Leakage Current
V
GS = ±30V
±100
nA
APT80GA60LD40
APT80GA60B2D40
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| APT80GP60JDF3 | 151 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT80GA60LD40 | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 143A 625W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 |
| APT80GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT80GA90B | 功能描述:IGBT 900V 145A 625W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT80GA90LD40 | 功能描述:IGBT 900V 145A 625W TO-264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 8™ 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT80GA90S | 制造商:Microsemi Corporation 功能描述:APT80GA90S - Rail/Tube |
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