参数资料
型号: APTC60AM18SC
元件分类: JFETs
英文描述: 143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-7
文件页数: 1/7页
文件大小: 311K
代理商: APTC60AM18SC
APTC60AM18SC
A
PT
C
60A
M
18S
C
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
143
ID
Continuous Drain Current
Tc = 80°C
107
IDM
Pulsed Drain current
572
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
18
m
W
PD
Maximum Power Dissipation
Tc = 25°C
833
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 18m
W max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
相关PDF资料
PDF描述
APTC60AM24SCTG 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60AM35T1G 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DAM18CTG 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC60DAM18CTG 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC60DAM18CTG 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
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