参数资料
型号: APTC60AM18SC
元件分类: JFETs
英文描述: 143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-7
文件页数: 2/7页
文件大小: 311K
代理商: APTC60AM18SC
APTC60AM18SC
A
PT
C
60A
M
18S
C
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1000A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 71.5A
18
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28
Coss
Output Capacitance
10.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.85
nF
Qg
Total gate Charge
1036
Qgs
Gate – Source Charge
116
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 143A
444
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 143A
RG = 1.2
W
84
ns
Eon
Turn-on Switching Energy
1608
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2
3920
J
Eon
Turn-on Switching Energy
2630
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2
4824
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
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