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参数资料
| 型号： | APTC60DDAM35T3 |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 1/6页 |
| 文件大小： | 337K |
| 代理商： | APTC60DDAM35T3 |
APTC60DDAM35T3
AP
T
C
60
DDAM
35
T
3–
R
ev
1
J
un
e,
2005
APT website – http://www.advancedpower.com
1 - 6
14
13
Q1
Q2
23
8
22
7
CR1
CR2
30
29
32
4
26
3
27
31
16
15
R1
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
72
ID
Continuous Drain Current
Tc = 80°C
54
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
35
m
PD
Maximum Power Dissipation
Tc = 25°C
416
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 35m max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Dual boost chopper
Super Junction MOSFET
Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTC60DDAM35T3 | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM45CT1G | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70CT1G | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DDAM35T3G | 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DDAM45CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC60DDAM45T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DDAM70CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 500V 39A SP1 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC60DDAM70T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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