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参数资料
| 型号： | APTC60DSKM70CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DSKM70CT1G |
Agere Systems Inc.
5
Data Sheet
AGR21045EF
June 2004
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
Figure 5. IMD3 vs. Output Power and IDQ
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
0.10
1.00
10.00
100.00
OUTPUT POWER (W) PEP
POWER
GAIN
(dB)
S
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
IDQ = 300
IDQ = 350 mA
IDQ = 400 mA
IDQ = 450 mA
IDQ = 500 mA
10 MHz TONE
SPACING
-65.0
-60.0
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
0.10
1.00
10.00
100.00
OUTPUT POWER (W) PEP
IMD3,
THIRD
ORDER
(dBc)
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
IDQ = 300 mA
IDQ = 350 mA
IDQ = 400 mA
IDQ = 450 mA
IDQ = 500 mA
10 MHz TONE
SPACING
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DSKM70T1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DSKM70T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual buck chopper Super Junction MOSFET Power Module |
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| APTC60HM24T3G | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 95A 20-Pin Case SP-3 T/R 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60HM35T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
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