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| 型号： | APTC60DSKM70CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DSKM70CT1G |
6
Agere Systems Inc.
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
June 2004
AGR21045EF
Data Sheet
Typical Performance Characteristics (continued)
Figure 6. IMD vs. Tone Spacing
Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power
-60.0
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.1
1
10
100
TWO-TONE SPACING (MHz)Z
IM
D
(
d
B
c
)Z
IM7
IM5
VDD = 28 V, POUT = 45 W PEP, Fo = 2140 MHz
IM3
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.00
5.00
10.00
15.00
20.00
25.00
OUTPUT POWER (WATTS-AVERAGE)Z
GA
IN
(dB
)Z
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
E
FF
(%
),
IMD
3
(dB
c),
A
C
P
R
(dB
c)
Z
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
FC = 2140 MHz, VDD = 28 V, IDQ = 400 mA
DRAIN EFFICIENCY
GAIN
IMD3
ACPR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DSKM70T1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DSKM70T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual buck chopper Super Junction MOSFET Power Module |
| APTC60DSKM70T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60HM24T3G | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 95A 20-Pin Case SP-3 T/R 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60HM35T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
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