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参数资料
| 型号： | APTC60DSKM70CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 7/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DSKM70CT1G |
Agere Systems Inc.
7
Data Sheet
AGR21045EF
June 2004
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 8. Broadband Performance
Figure 9. Spectral Plot
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
2100
2110
2120
2130
2140
2150
2160
2170
2180
FREQUENCY (MHz)Z
GA
IN
(dB
)Z
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
E
F
(%
),
R
L
(dB
),
IMD
3
(dB
c),
A
C
P
R
(dB
c)
Z
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
POUT = 10 W, VDD = 28 V, IDQ = 400 mA
EFFICIENCY
GAIN
RL
IMD3
ACPR
IMD3
ACPR
CENTER 2.140 GHz
SPAN 50 MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
-0
+5
2 CARRIER W-CDMA
3GPP
PEAK-TO-AVG = 8.5 dB
@ 0.01% CCDF
10 MHz SPACING
3.84 MHz CBW
POUT = 10 W
VDD = 28 V
IDQ = 400 mA
F2
F1
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相关代理商/技术参数 |
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|---|---|
| APTC60DSKM70T1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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| APTC60HM24T3G | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 95A 20-Pin Case SP-3 T/R 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60HM35T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
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