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参数资料
| 型号： | APTC60HM45SCTG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 238K |
| 代理商： | APTC60HM45SCTG |
APTC60HM45SCTG
APT
C
60HM
45SCT
G
–
Rev
2
Septem
ber
,2009
www.microsemi.com
2 – 8
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 22.5A
40
45
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7.2
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
8.5
nF
Qg
Total gate Charge
150
Qgs
Gate – Source Charge
34
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 44A
51
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive switching @ 125°C
VGS = 10V
VBus = 400V
ID = 50A
RG = 5Ω
45
ns
Eon
Turn-on Switching Energy
405
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 50A ; RG = 5Ω
520
J
Eon
Turn-on Switching Energy
658
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 50A ; RG = 5Ω
635
J
Series diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
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