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参数资料
| 型号： | APTC60HM45SCTG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 238K |
| 代理商： | APTC60HM45SCTG |
APTC60HM45SCTG
APT
C
60HM
45SCT
G
–
Rev
2
Septem
ber
,2009
www.microsemi.com
6 – 8
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,Drai
n
to
S
o
u
rce
Breakdown
V
o
lt
age
(Norm
a
li
z
ed)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(on),
Drai
n
to
S
o
urce
ON
resi
stan
ce
(N
or
ma
lize
d
)
VGS=10V
ID= 50A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Threshold
Volt
age
(N
or
ma
lize
d
)
Maximum Safe Operating Area
10 ms
1 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
C,
Capaci
tance
(pF)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
20 40 60 80 100 120 140 160
Gate Charge (nC)
V
GS
,Gate
to
S
ource
V
o
ltage
(V
)
Gate Charge vs Gate to Source Voltage
ID=50A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| APTC60HM70RT3G | 功能描述:POWER MODULE FULL BRIDGE SP3F RoHS:是 类别:半导体模块 >> FET 系列:CoolMOS™ 标准包装:10 系列:* |
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| APTC60HM70SCTG | 功能描述:MOSFET 4N CH 600V 39A SP4 RoHS:是 类别:半导体模块 >> FET 系列:CoolMOS™ 标准包装:10 系列:* |
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