参数资料
型号: APTC60HM45SCTG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 49 A, 600 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP4, 14 PIN
文件页数: 7/8页
文件大小: 238K
代理商: APTC60HM45SCTG
APTC60HM45SCTG
APT
C
60HM
45SCT
G
Rev
2
Septem
ber
,2009
www.microsemi.com
7 – 8
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Drai
n
Current
(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0
10 20304050 607080
ID, Drain Current (A)
t d(
on)
and
t
d(
of
f)
(n
s)
VDS=400V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
0
1020
3040
5060
7080
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=400V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
0
1020 3040 5060 7080
ID, Drain Current (A)
S
w
it
chi
ng
E
n
ergy
(m
J)
VDS=400V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
0
1020
3040
50
Gate Resistance (Ohms)
S
w
it
chi
ng
E
n
ergy
(m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=50A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
5 1015 20253035 404550
ID, Drain Current (A)
Frequency
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=5
TJ=125°C
TC=75°C
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