- 您现在的位置：买卖IC网 > PDF目录57949 > APTC60HM70T1G (MICROSEMI POWER PRODUCTS GROUP) 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTC60HM70T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 324K |
| 代理商： | APTC60HM70T1G |
APTC60HM70T1G
APT
C
60HM70T1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
erm
al
I
m
ped
ance
(
°C/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rr
ent
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
01
23
4
5
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cur
ren
t(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0
10
203040
5060
ID, Drain Current (A)
R
DS
(o
n)
Dr
ai
n
t
o
So
u
rce
ON
Resi
st
an
ce
Normalized to
VGS=10V @ 19.5A
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Drai
n
Cu
rr
en
t(A
)
DC Drain Current vs Case Temperature
相关PDF资料 |
PDF描述 |
|---|---|
| APTC60SKM35T1G | 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC80DA15T1G | 28 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC80TA15P | 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC80TA15P | 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90DAM60CT1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60HM70T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
| APTC60HM70T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60HM83FT2G | 功能描述:MOSFET N CH 600V 36A RoHS:是 类别:半导体模块 >> FET 系列:CoolMOS™ 标准包装:10 系列:* |
| APTC60HM991G | 制造商:Microsemi Corporation 功能描述: |
| APTC60SKM24CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi APTC60SKM24CT1G MOSFETs 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 95A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
发布紧急采购，3分钟左右您将得到回复。