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参数资料
| 型号： | APTC60HM70T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 324K |
| 代理商： | APTC60HM70T1G |
APTC60HM70T1G
APT
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60HM70T1G
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ugus
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www.microsemi.com
5 – 6
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
Dr
ai
n
to
S
o
u
rce
Br
ea
kd
own
Vo
lt
ag
e(
N
or
ma
li
ze
d)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(on
),
Drai
n
to
So
ur
ce
ON
r
esi
st
an
ce
(N
or
m
al
ize
d)
VGS=10V
ID= 39A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(TH)
,T
h
resho
ld
V
o
lt
age
(N
or
m
ali
ze
d)
Maximum Safe Operating Area
10 ms
1 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cur
ren
t
(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
C,
Cap
aci
tan
ce
(p
F)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
Gate Charge (nC)
V
GS
,Ga
te
to
So
u
rce
Vo
lt
ag
e(
V
)
Gate Charge vs Gate to Source Voltage
ID=39A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
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