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参数资料
| 型号： | APTC60HM70T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 324K |
| 代理商： | APTC60HM70T1G |
APTC60HM70T1G
APT
C
60HM70T1G
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v0
A
ugus
t,200
7
www.microsemi.com
6 – 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Dr
ain
Cu
rr
ent
(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
10203040506070
ID, Drain Current (A)
t d(
o
n
)an
d
t
d(of
f)(n
s)
VDS=400V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
1020
30
40
506070
ID, Drain Current (A)
t r
an
d
t
f(ns)
VDS=400V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
10
20
304050
6070
ID, Drain Current (A)
Sw
it
ch
ing
En
er
gy
(
m
J)
VDS=400V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Swi
tchi
n
g
E
n
er
gy
(m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=39A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
5
101520
25
3035
ID, Drain Current (A)
Fr
eque
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=5
TJ=125°C
TC=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
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