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参数资料
| 型号： | APTC60SKM35T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 313K |
| 代理商： | APTC60SKM35T1G |
APTC60SKM35T1G
APT
C
60SKM35T
1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
40
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72A
35
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5.4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
5.13
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
518
Qgs
Gate – Source Charge
58
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
222
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
84
ns
Eon
Turn-on Switching Energy
1340
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
1960
J
Eon
Turn-on Switching Energy
2192
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
2412
J
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
25
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 90°C
60
A
IF = 60A
1.7
2.3
IF = 120A
2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
70
trr
Reverse Recovery Time
Tj = 125°C
140
ns
Tj = 25°C
100
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/s
Tj = 125°C
690
nC
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