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参数资料
| 型号： | APTC80H15T3 |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 2/5页 |
| 文件大小： | 335K |
| 代理商： | APTC80H15T3 |
APTC80H15T3
A
P
T
C
80
H
15T
3
–R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
28
IS
Continuous Source current
(Body diode)
Tc = 80°C
21
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 28A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
550
ns
Qrr
Reverse Recovery Charge
IS = - 28A
VR = 400V
diS/dt = 200A/s
Tj = 25°C
30
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 28A
di/dt
≤ 200A/s
VR ≤ VDSS
Tj ≤ 150°C
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| APTC80H29T3 | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC80H15T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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