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参数资料
| 型号： | APTC80H15T3 |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 5/5页 |
| 文件大小： | 335K |
| 代理商： | APTC80H15T3 |
APTGT50TA60P
A
P
T
G
T
50
T
A
60P
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R
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M
ay,
2005
APT website – http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2
2.4
VF (V)
I C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
20406080
IC (A)
F
m
ax,
O
p
er
at
in
g
F
req
u
e
n
cy
(
kH
z
)
VCE=300V
D=50%
RG=10
TJ=150°C
Tc=85°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
rm
a
lI
m
p
e
da
n
c
e
(
°C
/W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC80H15T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H29SCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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