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参数资料
| 型号： | APTC80H29T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 324K |
| 代理商： | APTC80H29T1G |
APTC80H29T1G
APT
C
80H29T1G
–
R
ev
0
A
ugu
st
,2
007
www.microsemi.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
25
50
75
100
125
150
TJ, Junction Temperature (°C)
BV
DS
S,
Drai
n
to
So
ur
ce
Breakdo
w
n
Volt
ag
e
(N
o
rma
lize
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(o
n),
Drai
n
t
o
So
u
rce
ON
resi
st
an
ce
(N
or
ma
lize
d
)
VGS=10V
ID= 7.5A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
es
h
old
V
o
lt
ag
e
(N
or
ma
lize
d
)
Maximum Safe Operating Area
100ms
1ms
100s
0
1
10
100
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
ai
n
Cu
rr
ent
(A)
limited by
RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
0
10
2030
4050
VDS, Drain to Source Voltage (V)
C,
Cap
aci
tan
ce
(p
F)
Capacitance vs Drain to Source Voltage
VDS=160V
VDS=400V
VDS=640V
0
2
4
6
8
10
12
14
16
0
2040
6080
100
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
,G
at
et
o
Sou
rc
eVo
lt
ag
e(
V
)
ID=15A
TJ=25°C
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参数描述 |
|---|---|
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