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参数资料
| 型号： | APTC80H29T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 324K |
| 代理商： | APTC80H29T1G |
APTC80H29T1G
APT
C
80H29T1G
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R
ev
0
A
ugu
st
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007
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
5
10
152025
ID, Drain Current (A)
td
(o
n
)an
d
td
(o
ff
)(ns)
VDS=533V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
5
1015
2025
ID, Drain Current (A)
t r
a
nd
t
f(n
s)
VDS=533V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
100
200
300
400
500
600
700
800
510
15
20
25
ID, Drain Current (A)
E
o
n
an
d
E
o
ff
(
J)
VDS=533V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
250
500
750
1000
1250
0
102030
4050
Gate Resistance (Ohms)
Sw
it
ch
ing
Ene
rgy
(
J)
Switching Energy vs Gate Resistance
VDS=533V
ID=15A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
46
8
10
12
14
ID, Drain Current (A)
Fr
eq
u
enc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
VSD, Source to Drain Voltage (V)
I DR
,R
eve
rs
e
D
rain
C
u
rr
e
n
t(A
)
Source to Drain Diode Forward Voltage
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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参数描述 |
|---|---|
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