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参数资料
| 型号： | APTC90H12T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 205K |
| 代理商： | APTC90H12T1G |
APTC90H12T1G
APT
C
90H12T
1G
–
Rev
0
August,
2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 26A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6.8
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.33
nF
Qg
Total gate Charge
270
Qgs
Gate – Source Charge
32
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A
115
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
25
ns
Eon
Turn-on Switching Energy
1.5
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.75
mJ
Eon
Turn-on Switching Energy
2.1
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.85
mJ
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
30
IS
Continuous Source current
(Body diode)
Tc = 80°C
23
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 26A
0.8
1.2
V
trr
Reverse Recovery Time
Tj = 25°C
920
ns
Qrr
Reverse Recovery Charge
IS = - 26A
VR = 400V
diS/dt = 200A/s
Tj = 25°C
30
C
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