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参数资料
| 型号： | APTC90H12T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 205K |
| 代理商： | APTC90H12T1G |
APTC90H12T1G
APT
C
90H12T
1G
–
Rev
0
August,
2009
www.microsemi.com
4 – 5
Typical performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rmal
I
m
pedance
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rrent
(A)
Low Voltage Output Characteristics
VGS=20, 8V
0
5
10
15
20
25
30
35
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,D
C
Drai
n
Cur
rent
(A
)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,Dr
ai
n
to
S
o
u
rc
e
Br
eak
d
o
w
n
Volt
age
Maximum Safe Operating Area
10 ms
100 s
0.1
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,
Dr
ai
n
Cu
rr
e
n
t(A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
C
,Capac
ita
nce
(pF
)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0
50
100
150
200
250
300
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sou
rce
Vo
lta
g
e
(V)
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=26A
TJ=25°C
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相关代理商/技术参数 |
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