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参数资料
| 型号： | APTGF165DA60D1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 230 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D1, 7 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 178K |
| 代理商： | APTGF165DA60D1G |
APTGF165DA60D1G
APT
G
F165DA60D1G
–
Rev
1
Decem
ber,
2009
www.microsemi.com
2- 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.95
2.45
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 4 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9000
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
800
pF
QG
Gate charge
VGE=15V, IC=200A
VCE=300V
650
nC
Td(on)
Turn-on Delay Time
150
Tr
Rise Time
72
Td(off)
Turn-off Delay Time
530
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
40
ns
Td(on)
Turn-on Delay Time
160
Tr
Rise Time
75
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
50
ns
Eon
Turn on energy
Tj = 125°C
9
Eoff
Turn off energy
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
Tj = 125°C
8.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10s ; Tj = 125°C
900
A
Chopper Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.2
V
Tj = 25°C
150
trr
Reverse Recovery time
Tj = 125°C
250
ns
Tj = 25°C
13
Qrr
Reverse Recovery Charge
Tj = 125°C
20
C
Tj = 25°C
2.9
Err
Reverse Recovery Energy
IF = 200A
VR = 300V
di/dt =3500A/s
Tj = 125°C
5.7
mJ
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PDF描述 |
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| APTGF165SK60D1 | 230 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF165SK60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF165SK60D1G | 功能描述:IGBT 600V 230A 730W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF180A60D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF180A60T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module |
| APTGF180A60TG | 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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