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参数资料
| 型号： | APTGF25X120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 228K |
| 代理商： | APTGF25X120T3G |
APTGF25X120T3G
APT
G
F25X120T
3G
–
Rev
0
July,
2007
www.microsemi.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
A
Tj = 25°C
2.5
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 25A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1650
Coes
Output Capacitance
250
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
110
pF
Qg
Total gate Charge
160
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 600V
IC =25A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
305
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
346
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
3.5
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
Tj = 125°C
1.5
mJ
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
2.6
3.1
IF = 60A
3.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
380
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
1700
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF300A120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module |
| APTGF300A120AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF300A120D3G | 功能描述:IGBT MODULE NPT PHASE LEG D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF300A120G | 功能描述:POWER MOD IGBT NPT PHASE LEG SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF300A120T6G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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