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参数资料
| 型号： | APTGF25X120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 228K |
| 代理商： | APTGF25X120T3G |
APTGF25X120T3G
APT
G
F25X120T
3G
–
Rev
0
July,
2007
www.microsemi.com
5- 6
VGE = 15V
50
55
60
65
70
75
5
152535
45
55
ICE, Collector to Emitter Current (A)
td
(o
n)
,T
u
rn
-O
n
D
e
la
y
Tim
e
(
n
s
)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 22
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
5
1525
3545
55
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td(o
ff),
T
u
rn
-Of
fDel
a
y
T
im
e
(ns
)
VCE = 600V
RG = 22
VGE=15V
0
40
80
120
160
5
15
2535
4555
ICE, Collector to Emitter Current (A)
tr
,
Ri
se
Ti
m
e
(ns)
Current Rise Time vs Collector Current
VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
5
1525
354555
ICE, Collector to Emitter Current (A)
tf
,
F
a
ll
T
im
e
(
n
s
)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 22
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
2
4
6
8
10
5
1525
3545
55
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
Eo
n,
T
u
rn
-O
n
E
n
e
rgy
Lo
s
(
m
J
)
VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
1525
354555
ICE, Collector to Emitter Current (A)
E
o
ff
,Tu
rn
-off
En
erg
y
L
o
ss
(m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 22
Eon, 25A
Eoff, 25A
0
1
2
3
4
5
0
1020
30
40
5060
Gate Resistance (Ohms)
S
w
it
chi
n
g
E
n
ergy
Losses
(mJ)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
10
20
30
40
50
60
0
400
800
1200
I C
,
C
o
lle
c
to
rC
u
rr
e
n
t(
A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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相关代理商/技术参数 |
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| APTGF300A120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module |
| APTGF300A120AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF300A120D3G | 功能描述:IGBT MODULE NPT PHASE LEG D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF300A120G | 功能描述:POWER MOD IGBT NPT PHASE LEG SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF300A120T6G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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