参数资料
型号: APTGF90SK60TG
元件分类: IGBT 晶体管
英文描述: 110 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, MODULE-2
文件页数: 2/6页
文件大小: 309K
代理商: APTGF90SK60TG
APTGF90SK60TG
A
P
T
G
F
90S
K
60T
G
R
ev
0
S
ept
em
be
r,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1000
A
Tj = 25°C
2.0
2.5
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 90A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = 20 V, VCE = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4300
Coes
Output Capacitance
470
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
400
pF
Qg
Total gate Charge
330
Qge
Gate – Emitter Charge
290
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 90A
200
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
3.35
Eoff
Turn-off Switching Energy
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5
2.85
mJ
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
4.3
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5
3.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward current
Tc = 80°C
100
A
IF = 100A
1.6
2
IF = 200A
2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.3
V
Tj = 25°C
160
trr
Reverse Recovery Time
Tj = 125°C
220
ns
Tj = 25°C
290
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt =200A/s
Tj = 125°C
1530
nC
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