参数资料
型号: APTGF90SK60TG
元件分类: IGBT 晶体管
英文描述: 110 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, MODULE-2
文件页数: 5/6页
文件大小: 309K
代理商: APTGF90SK60TG
APTGF90SK60TG
A
P
T
G
F
90S
K
60T
G
R
ev
0
S
ept
em
be
r,
2005
APT website – http://www.advancedpower.com
5 - 6
VGE = 15V
15
20
25
30
35
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(on)
,Tur
n-
O
n
D
e
la
yTi
m
e(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
R
G = 5
V
GE =15V,
T
J=25°C
V
GE=15V,
TJ=125°C
50
100
150
200
250
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
td
(o
ff),
T
u
rn
-O
ff
D
el
ay
T
im
e
(n
s)
Turn-Off Delay Time vs Collector Current
V
CE = 400V
R
G = 5
V
GE=15V,
T
J=125°C
0
20
40
60
80
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e(
n
s)
Current Rise Time vs Collector Current
VCE = 400V
R
G = 5
TJ = 25°C
T
J = 125°C
0
20
40
60
80
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
tf
,F
all
T
ime
(
n
s)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
T
J=25°C,
VGE=15V
T
J=125°C,
V
GE=15V
0
2
4
6
8
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
on
,Tur
n-
O
n
E
n
er
gy
Los
s
(m
J
)
Turn-On Energy Loss vs Collector Current
V
CE = 400V
R
G = 5
TJ= 25°C
TJ = 125°C
0
1
2
3
4
5
6
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
E
of
f,
Tur
n-
of
fE
n
er
gy
Los
s(
m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
V
GE = 15V
R
G = 5
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
4
8
12
16
0
10
203040
50
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
ch
in
g
E
n
e
rg
yL
o
sses
(m
J
)
VCE = 400V
VGE = 15V
T
J= 125°C
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff , 45A
0
2
4
6
8
10
0
255075
100
125
TJ, Junction Temperature (°C)
S
w
it
c
h
in
g
E
n
er
g
y
L
o
s
ses
(
m
J)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 5
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