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参数资料
| 型号： | APTGS25X120RTP2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-24 |
| 文件页数： | 2/4页 |
| 文件大小： | 242K |
| 代理商： | APTGS25X120RTP2 |
APTGS25X120RTP2
APTGS25X120BTP2
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGS25X120BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
12.5
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
100
W
IF
DC Forward Current
TC = 80°C
25
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
45
IC
Continuous Collector Current
TC = 80°C
25
ICM
Pulsed Collector Current
TC = 25°C
50
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
230
W
SCSOA Short circuit Safe Operating Area
Tj = 125°C
160A @ 720V
IF
DC Forward Current
TC = 80°C
25
IFSM
Surge Forward Current
tp = 1ms
TC = 80°C
50
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
2
mA
IF = 30A
Tj = 25°C
1.3
1.5
VF
Forward Voltage
IF = 25A
Tj = 150°C
1.05
1.1
V
RthJC
Junction to Case
1
°C/W
IGBT Brake & Diode (only for APTGS25X120BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
0.8
mA
Tj = 25°C
2.7
3.15
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 12.5A
Tj = 125°C
3.1
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Tj = 25°C
2.05
2.4
VF
Forward Voltage
VGE = 0V
IF = 25A
Tj = 125°C
1.9
V
IGBT
1.2
RthJC
Junction to Case
Diode
1.2
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGS25X120RTP2G | 20 A, 1200 V, N-CHANNEL IGBT |
| APTGS50X170E2 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E2 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E2G | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E3G | 100 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGS50X170E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170E3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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