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参数资料
| 型号： | APTGS25X120RTP2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-24 |
| 文件页数： | 3/4页 |
| 文件大小： | 242K |
| 代理商： | APTGS25X120RTP2 |
APTGS25X120RTP2
APTGS25X120BTP2
A
PT
G
S2
5X
12
0B
T
P2
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
1.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
2
mA
Tj = 25°C
2.1
2.55
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 25A
Tj = 125°C
2.45
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
1500
pF
Td(on)
Turn-on Delay Time
45
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
290
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27
60
ns
Td(on)
Turn-on Delay Time
45
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
340
Tf
Fall Time
80
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27
3.2
mJ
Tj = 25°C
2.05
2.5
VF
Forward Voltage
VGE = 0V
IF = 25A
Tj = 125°C
1.9
V
Tj = 25°C
2.1
Qrr
Reverse Recovery Charge
IF = 25A
VR = 600V
di/dt=800A/s
Tj = 125°C
4.5
C
IGBT
0.55
RthJC
Junction to Case
Diode
1.2
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
185
g
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料 |
PDF描述 |
|---|---|
| APTGS25X120RTP2G | 20 A, 1200 V, N-CHANNEL IGBT |
| APTGS50X170E2 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E2 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E2G | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E3G | 100 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGS50X170E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170E3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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