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参数资料
| 型号： | APTGT100DU120T |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 140 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-12 |
| 文件页数： | 1/4页 |
| 文件大小： | 278K |
| 代理商： | APTGT100DU120T |
APTM10SKM05T
A
P
T
M
10S
K
M
05T
–R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 125A
4.5
5
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20
Coss
Output Capacitance
8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
2.9
nF
Qg
Total gate Charge
700
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 250A
360
nC
Td(on)
Turn-on Delay Time
80
Tr
Rise Time
165
Td(off)
Turn-off Delay Time
280
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
RG = 2.5
135
ns
Eon
Turn-on Switching Energy
1.1
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5
1.2
mJ
Eon
Turn-on Switching Energy
1.22
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5
1.28
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
200
A
IF = 200A
1
IF = 400A
1.4
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
Tj = 125°C
110
ns
Tj = 25°C
400
Qrr
Reverse Recovery Charge
IF = 200A
VR = 133V
di/dt =400A/s
Tj = 125°C
1680
nC
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相关代理商/技术参数 |
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|---|---|
| APTGT100DU120TG | 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100DU170T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module |
| APTGT100DU170TG | 功能描述:IGBT DUAL SOURCE 1700V 150A SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100DU60T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module |
| APTGT100DU60TG | 功能描述:POWER MOD IGBT TRENCH DL SRC SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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