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参数资料
| 型号： | APTGT30SK170T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 45 A, 1700 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 276K |
| 代理商： | APTGT30SK170T1G |
APTGT30SK170T1G
APTGT30SK
17
0T1G
–
Re
v0
Au
gus
t,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
A
Tj = 25°C
2.0
2.4
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 30A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2500
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
90
pF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
80
ns
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
750
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
100
ns
Eon
Turn-on Switching Energy
Tj = 125°C
17
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
Tj = 125°C
15
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1700V
Tj = 125°C
500
A
IF
DC Forward Current
TC=80°C
50
A
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 125°C
1.9
V
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
490
ns
Tj = 25°C
14
Qrr
Reverse Recovery Charge
Tj = 125°C
23
C
Tj = 25°C
6
Er
Reverse Recovery Energy
IF = 50A
VR = 900V
di/dt =800A/s
Tj = 125°C
12
mJ
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