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参数资料
| 型号： | APTM100A13SC |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 2/6页 |
| 文件大小： | 313K |
| 代理商： | APTM100A13SC |
APTM100A13SC
A
P
T
M
100A
13S
C
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
1000
V
VGS = 0V,VDS= 1000V
Tj = 25°C
600
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
2
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 32.5A
130
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±450
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
15.2
Coss
Output Capacitance
2.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
562
Qgs
Gate – Source Charge
75
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 65A
363
nC
Td(on)
Turn-on Delay Time
9
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 0.5
24
ns
Eon
Turn-on Switching Energy
1278
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
462
J
Eon
Turn-on Switching Energy
2671
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
570
J
In accordance with JEDEC standard JESD24-1.
SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
400
1600
IRRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
800
8000
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 125°C
40
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 40A
Tj = 175°C
2.6
3.0
V
QC
Total Capacitive Charge
IF = 40A, VR = 600V
di/dt =2000A/s
112
nC
f = 1MHz, VR = 200V
360
Q
Total Capacitance
f = 1MHz, VR = 400V
264
pF
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