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参数资料
| 型号： | APTM100A13SC |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 3/6页 |
| 文件大小： | 313K |
| 代理商： | APTM100A13SC |
APTM100A13SC
A
P
T
M
100A
13S
C
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
3 – 7
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
1.1
1.15
IF = 120A
1.4
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
48
ns
Tj = 25°C
66
Qrr
Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
300
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.10
Series diode
0.65
RthJC
Junction to Case
Parallel diode
0.35
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque
Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
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