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参数资料
| 型号： | APTM100DU18T |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 2/6页 |
| 文件大小： | 312K |
| 代理商： | APTM100DU18T |
APTM100DU18T
AP
T
M
10
0DU1
8T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
1000
V
VGS = 0V,VDS = 1000V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 21.5A
180
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10.4
Coss
Output Capacitance
1.76
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.32
nF
Qg
Total gate Charge
372
Qgs
Gate – Source Charge
48
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 43A
244
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5
40
ns
Eon
Turn-on Switching Energy
1800
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
1246
J
Eon
Turn-on Switching Energy
2846
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
1558
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
43
IS
Continuous Source current
(Body diode)
Tc = 80°C
33
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 43A
1.3
V
dv/dt
Peak Diode Recovery
10
V/ns
trr
Reverse Recovery Time
1170
ns
Qrr
Reverse Recovery Charge
IS = - 43A, VR = 500V
diS/dt = 200A/s
32.5
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 43A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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