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参数资料
| 型号： | APTM100DU18T |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 4/6页 |
| 文件大小： | 312K |
| 代理商： | APTM100DU18T |
APTM100DU18T
AP
T
M
10
0DU1
8T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
20
40
60
80
100
120
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15, 10&8V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
160
012345
6789
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
20406080
100
120
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 21.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM100DU18TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100DUM90 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
| APTM100DUM90G | 功能描述:MOSFET MOD DUAL COMMON SRC SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100H18F | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM100H18FG | 功能描述:MOSFET MOD FULL BRIDGE 1000V SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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