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参数资料
| 型号： | APTM100DUM90 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 78 A, 1000 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 6/6页 |
| 文件大小： | 302K |
| 代理商： | APTM100DUM90 |
APTM100DUM90
AP
T
M
10
0DUM
90
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
200
20
40
60
80
100 120 140 160
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
20
40
60
80
100 120 140 160
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
E
on
Eoff
0
2
4
6
8
10
20
40
60
80 100 120 140 160
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=670V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
12
14
02468
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=670V
ID=78A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
0
10203040506070
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=1.2
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
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|---|---|
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