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参数资料
| 型号： | APTM120H29F |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 1/6页 |
| 文件大小： | 308K |
| 代理商： | APTM120H29F |
APTM120H29F
A
P
T
M
120H
29F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
S4
G4
S3
Q3
G3
G1
Q1
Q4
0/VBUS
VBUS
OU
T2
OU
T1
G2
Q2
S2
S1
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
34
ID
Continuous Drain Current
Tc = 80°C
25
IDM
Pulsed Drain current
136
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
290
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 290m max @ Tj = 25°C
ID = 34A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Full - Bridge
MOSFET Power Module
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| APTM120H57FT3 | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120SK29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
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| APTM120H29FG | 功能描述:PWR MODULE MOSFET 1200V 34A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM120H57FT3G | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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