- 您现在的位置：买卖IC网 > PDF目录36740 > APTM120H29F 34 A, 1200 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM120H29F |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 6/6页 |
| 文件大小： | 308K |
| 代理商： | APTM120H29F |
APTM120H29F
A
P
T
M
120H
29F
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
180
10
20
30
40
50
60
70
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
10
20
30
40
50
60
70
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
10
20
30
40
50
60
70
ID, Drain Current (A)
Sw
it
ch
in
gEne
rgy
(m
J)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
1
2
3
4
5
6
7
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=34A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
8
1216
202428
32
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=2.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTM120H57FT3 | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120H57FT3 | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120H57FT | 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM120SK29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120H29FG | 功能描述:PWR MODULE MOSFET 1200V 34A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120H57FT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM120H57FT3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM120H57FT3G | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120H57FTG | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。