- 您现在的位置：买卖IC网 > PDF目录36741 > APTM120UM70D-A1N 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM120UM70D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-5 |
| 文件页数： | 2/6页 |
| 文件大小： | 299K |
| 代理商： | APTM120UM70D-A1N |
APTM120UM70D-AlN
A
P
T
M
120U
M
70D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
1.5
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
6
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 85.5A
70
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 30mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
43.5
Coss
Output Capacitance
6.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1.2
nF
Qg
Total gate Charge
1650
Qgs
Gate – Source Charge
192
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 171A
1074
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
245
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 171A
RG =0.8
62
ns
Eon
Turn-on Switching Energy
7.6
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8
6.9
mJ
Eon
Turn-on Switching Energy
13.8
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8
8.5
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
240
A
IF = 240A
2
2.5
IF = 480A
2.3
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
IF = 240A
VR = 800V
di/dt = 800A/s
Tj = 125°C
470
ns
Tj = 25°C
4.8
Qrr
Reverse Recovery Charge
IF = 240A
VR = 800V
di/dt = 800A/s
Tj = 125°C
16
C
相关PDF资料 |
PDF描述 |
|---|---|
| APTM120UM70DAG | 171 A, 1200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120VDA57T3G | 17 A, 1200 V, 0.684 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM04F | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM04F | 372 A, 200 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM05FT | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120UM70DAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120UM70D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120UM70FA | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM120UM70FAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120UM70F-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch MOSFET Power Module |
发布紧急采购，3分钟左右您将得到回复。