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参数资料
| 型号： | APTM120UM70D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-5 |
| 文件页数： | 4/6页 |
| 文件大小： | 299K |
| 代理商： | APTM120UM70D-A1N |
APTM120UM70D-AlN
A
P
T
M
120U
M
70D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
5V
5.5V
6V
7V
0
60
120
180
240
300
360
420
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
420
480
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
60
120
180
240
300
360
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 85.5A
0
45
90
135
180
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120UM70DAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120UM70D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120UM70FA | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM120UM70FAG | 功能描述:MOSFET N-CH 1200V 171A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120UM70F-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch MOSFET Power Module |
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