- 您现在的位置：买卖IC网 > PDF目录51276 > APTM20AM05F (MICROSEMI POWER PRODUCTS GROUP) 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM20AM05F |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 2/6页 |
| 文件大小： | 289K |
| 代理商： | APTM20AM05F |
APTM20AM05F
A
PT
M
20A
M
05F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 158.5A
5
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
27.4
Coss
Output Capacitance
8.72
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.38
nF
Qg
Total gate Charge
448
Qgs
Gate – Source Charge
172
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 300A
188
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2
W
99
ns
Eon
Turn-on Switching Energy
u
1852
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
1820
J
Eon
Turn-on Switching Energy
u
2432
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
2124
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
317
IS
Continuous Source current
(Body diode)
Tc = 80°C
234
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 300A
1.3
V
dv/dt
Peak Diode Recovery
w
8
V/ns
Tj = 25°C
220
trr
Reverse Recovery Time
Tj = 125°C
420
ns
Tj = 25°C
4.28
Qrr
Reverse Recovery Charge
IS = -300A
VR = 100V
diS/dt = 400A/s
Tj = 125°C
11.6
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 300A
di/dt
700A/s
VR
VDSS
Tj
150°C
相关PDF资料 |
PDF描述 |
|---|---|
| APTM20AM06S | 300 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM06S | 300 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM08FT | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM08FT | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM08TG | 208 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20AM05FG | 功能描述:MOSFET MODULE PHASE LEG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20AM05FT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM20AM05FTG | 功能描述:MOSFET MODULE PHASE LEG LP8 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20AM06S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
| APTM20AM06SG | 功能描述:MOSFET MOD PHASE LEG SER/PAR SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。