参数资料
型号: APTM50DDA10T3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 35 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: MODULE-25
文件页数: 2/6页
文件大小: 321K
代理商: APTM50DDA10T3
APTM50DDA10T3
A
P
T
M
50D
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A
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,2004
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V
VDS = 500V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18.5A
100
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4367
Coss
Output Capacitance
894
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
61
pF
Qg
Total gate Charge
96
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 37A
49
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
21
Td(off)
Turn-off Delay Time
73
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 37A
RG = 5
52
ns
Eon
Turn-on Switching Energy
566
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5
545
J
Eon
Turn-on Switching Energy
931
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5
635
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
30
A
IF = 30A
2.2
2.7
IF = 60A
2.7
VF
Diode Forward Voltage
IF = 30A
Tj = 150°C
1.5
V
Tj = 25°C
74
trr
Reverse Recovery Time
Tj = 100°C
74
ns
Tj = 25°C
123
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt=200A/s
Tj = 100°C
288
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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