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参数资料
| 型号： | APTM50DDA10T3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 5/6页 |
| 文件大小： | 321K |
| 代理商： | APTM50DDA10T3 |
APTM50DDA10T3
A
P
T
M
50D
D
A
10T
3–
R
ev1
D
ecem
ber
,2004
APT website – http://www.advancedpower.com
5 - 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
rai
n
to
S
o
u
rce
B
reak
d
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
rai
n
to
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID=18.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Th
re
s
h
o
ld
V
o
lt
a
g
e
(N
or
m
a
li
z
ed)
limited by RDSon
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
102030
4050
VDS, Drain to Source Voltage (V)
C
,C
a
pa
ci
ta
nc
e
(
p
F)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
14
0
20
40
60
80
100 120 140
Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
ID=37A
TJ=25°C
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